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Publications
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E. Spiecker, Ch. Jäger, H. Lu, and W. Jäger, Unified Polarity Analysis of <110> and <001>
Sphalerite-type Crystal Samples Using Bragg-line Contrast Rules, Microscopy of Semiconducting Materials, Cambridge 2003, T. Cullis and P. Midgley (Eds.), Inst. Phys. Conf. Ser., in press.
E.
Spiecker and W. Jäger, Quantitative large-area analysis of misfit dislocation arrays by bend contour contrast evaluation, Microscopy of Semiconducting Materials, Cambridge 2003, T. Cullis and P. Midgley
(Eds.), Inst. Phys. Conf. Ser., in press.
E. Spiecker, Interface and Surface Phenomena of Transition Metal Dichalcogenide Crystals: Ultrathin Layer Epitaxy and Self-assembling of Nanostructures,
Microsc. Microanal. 9 (Suppl. 3), 2003, p. 300.
E. Spiecker, Ch. Jäger, H. Lu and W. Jäger, Polarity Determination of Sphalerite-type <110> and <001> Crystal Samples Using Simple
Bragg-line Contrast Rules, Microsc. Microanal. 9 (Suppl. 3), 2003, p. 94.
Ch. Jäger, E. Spiecker, and W. Jäger, Shapes and Interfaces of Voids in III-V Compound Semiconductors, Microsc. Microanal.
9 (Suppl. 3), 2003, p. 296.
S. Hollensteiner, E. Spiecker, W. Jäger, H. Haselier, and H. Schroeder, Analyses of Nanostructure Formation by Cu Deposition onto VSe2 Surfaces, Microsc. Microanal. 9
(Suppl. 3), 2003, p. 216.
E. Spiecker, Fundamentals of Large-Angle Convergent Beam Electron Diffraction (LACBED), Proceedings of the 1st Stanislaw Gorczyca Summer School on Advanced Transmission
Electron Microscopy (2003), Part B, p. 229.
E. Spiecker, Application of Large-Angle Convergent Beam Electron Diffraction (LACBED) and bend contour contrast analysis for the investigation of
crystal defects, Proceedings of the 1st Stanislaw Gorczyca Summer School on Advanced Transmission Electron Microscopy (2003), Part B, p. 251.
E. Spiecker, Ch. Jäger und W. Jäger, Lokale Bestimmung
der Atomanordnung in polaren Kristallen mit Sphaleritstruktur im Transmissionselektronenmikroskop, Zeitschrift f. Kristallographie, Suppl. 20 (2003) 37.
Ch. Jäger, E. Spiecker, J.-P. Morniroli und
W. Jäger, Analyse von Versetzungsringen mittels konvergenter Elektronenbeugung, Zeitschrift f. Kristallographie, Suppl. 20 (2003) 34.
S. Hollensteiner, E. Spiecker, C. Dieker, W. Jäger, R.
Adelung, L. Kipp and M. Skibowski, Self-assembled nanowire formation during Cu deposition on atomically flat VSe2 surfaces studied by microscopic methods, Mater. Sci. Eng. C 23 (2003) 171.
E.
Spiecker and W. Jäger, Burgers vector determination of large area misfit dislocation arrays by bend contour analysis in transmission electron microscopy images, J. Phys.: Condensed Matter 14 (2002)
12767-12776.
E. Spiecker, Determination of crystal polarity from bend contours in transmission electron microscopy images, Ultramicroscopy 92 (2002) 111.
Ch. Jäger, E. Spiecker, J.-P.
Morniroli and W. Jäger, Polarity determination of III-V compound semiconductors by large-angle convergent beam electron diffraction, Ultramicroscopy 92 (2002) 273.
E. Spiecker, Ch. Jäger and W.
Jäger, Polarity analysis of GaP with the bend contour method, ICEM 15, Durban (2002) p. 649.
Ch. Jäger, E. Spiecker, J.-P. Morniroli and W. Jäger, Analysis of dislocation loops by means of
large-angle convergent beam electron diffraction, J. Phys.: Condensed Matter 14 (2002) 12777.
R. Adelung, F. Ernst, A. Scott, M. Tabib-Azar, L. Kipp, M. Skibowski, S. Hollensteiner, E. Spiecker,
W. Jäger, W. Gunst, A. Klein, W. Jagermann, V. Zaporojtchenko and F. Faupel, Self-assembled nanowire networks by deposition of copper onto layered-crystal surfaces, Advanced Materials 14 (2002) 1056.
W. Schröter, V. Kveder, M. Seibt, A. Sattler and E. Spiecker, Mechanisms and computer modelling of transition element gettering in silicon, Sol. Energy Mater. Sol. Cells 72 (2002) 299.
E.
Spiecker, Ch. Jäger and W. Jäger, Determining the crystal polarity of compound semiconductors from bend contours, Microscopy of Semiconducting Materials XII, Oxford (2001), Inst. Phys. Conf. Ser.
No. 169, p. 311.
E. Spiecker, M. Seibt, W. Schröter, R. Winterhoff and F. Scholz, Exploiting long-range atomic ordering for the investigation of strain relaxation in lattice-mismatched epitaxy: A
case study on CuPtB-type ordered (GaIn)P on GaAs, Applied Surface Science 188 (2001) 61.
M. Gimbel, S. Schneider, E. Spiecker and M. Seibt, Defect-enhanced solid-state amorphization in
Zr100-xAlx/Ni thin-film diffusion couples, Appl. Phys. Lett 76 (2000) 1825.
E. Spiecker, M. Seibt, W. Schröter, M. Wenderoth, R. Winterhoff and F. Scholz, Formation and evolution of antiphase
boundaries during epitaxial growth of long-range ordered GaInP, Microscopy of Semiconducting Materials XII, Oxford (1999), Inst. Phys. Conf. Ser. No. 164, p.179.
M. Seibt, M. Apel, A. Döller, H.
Ewe, E. Spiecker, W. Schröter and A. Zozime, Modeling and experimental verification of gettering mechanisms, Proceedings of the 8th International Symposium on Silicon Materials Science and Technology,
Electrochem. Soc., Pennington, NJ, USA; (1998) Vol. 2, p. 1064.
E. Spiecker, M. Seibt and W. Schröter, Phosphorous-diffusion gettering in the presence of non-equilibrium concentration of
self-interstitials: A quantitative model, Phys. Rev. B 55 (1997) 9577.
M. Seibt and E. Spiecker, Behaviour of the size distribution function of end-of-range dislocation loops during silicon
oxidation, Diffusion and Defect Data Part B 47-48 (1996) 205.
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